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 T-1 3/4 PACKAGE PIN PHOTODIODE
Description
The MID-54H19 is a photodiode mounted in special dark end look plastic package and suitable for the IRED (850nm/880nm) type.
r5.05
(.200)
MID-54H19
Package Dimensions
Unit : mm ( inches )
5.47 (.215) 7.62 (.300) 5.90 (.230)
Features
l l l l l
1.00 (.040) FLAT DENOTES CATHOD
High photo sensitivity Low junction capacitance High cut-off frequency Fast switching time Acceptance angle : 40
0.50TYP. (.020) 23.40MIN. (.920)
1.00MIN. (.040) 2.54 (.100)
Application
l
A
C
Data communication
Notes : 1. Tolerance is 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.0 mm (.040") max. 3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25 C Parameter Power Dissipation Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 150 -55 C to +100 C -55 C to +100 C 260oC for 5 seconds
o o o o o
Unit mW
Unity Opto Technology Co., Ltd.
02/04/2002
MID-54H19
Optical-Electrical Characteristics
@ TA=25oC Parameter Test Conditions Ee=0 Reverse Dark Current Open Circuit Voltage Rise Time Fall Time Light Current Total Capacitance VR=10V Ee=0 =850nm Ee=0.1mW/cm2 VR =10V =850nm RL=50 VR =5V, =850nm Ee=0.1mW/cm2 VR =3V, f=1MHZ Ee=0 VOC Tr Tf IL CT 7 350 30 30 12 25 A pF mV nS ID 30 nA Symbol V(BR)R Min. 30 Type . Max. Unit V IR Reverse Break Down Voltage=100A
Typical Optical-Electrical Characteristic Curves
4000 100
Dark Current - pA
Capacitance C - pF
3000
80 60 40 20 0
2000
1000
0 0 5 10 15 20
0.01
0.1
1
10
100
Reverse Voltage - VR FIG.1 DARK CURRENT VS REVERSE VOLTAGE TEMP=25 C , Ee=0 mW/cm
200
o 2
Reverse Voltage- VR FIG.2 CAPACITANCE VS. REVERSE VOLTAGE F=1MHZ, Ee=0mW/cm2
1000
Total Power Dissipation mW
150
Dark Current IR - nA
100
100
10
50
1
0 0 20 40 60 80
o
0.1 100 0 20 40 60 80
o
100
Ambient Temperature - C FIG.3 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE
Ambient Temperature- C FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE VR=10, Ee=0 mw/cm2
Unity Opto Technology Co., Ltd.
02/04/2002
MID-54H19
Typical Optical-Electrical Characteristic Curves
100 1000
Relative Spectral Sensitivity
80 60
Ip - A Photocurrnet
100
10
40 20 0 700 800 900 1000 1100 1200
1
0.1 0.01
0. 1
1
10
Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH
Irradiance Ee (mW/cm2) FIG.6 PHOTOCURRENT VS. IRRADIANCE = 850 nm
0 10 20 30
Relative Sensitivity
40 1.0 0.9 0.8 50 60 70 80 90 0.5 0.3 0.1 0.2 0.4 0.6
FIG.7 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002


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